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VDS8608A8A 参数 Datasheet PDF下载

VDS8608A8A图片预览
型号: VDS8608A8A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM ( 8M ×8位×4银行) [Synchronous DRAM(8M X 8 Bit X 4 Banks)]
分类和应用: 动态存储器
文件页数/大小: 8 页 / 503 K
品牌: A-DATA [ A-DATA TECHNOLOGY ]
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V-Data
Synchronous DRAM
General Description
The VDS8608A8A are four-bank Synchronous
DRAMs organized as 8,388,608 words x 8 bits x 4
banks.
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
VDS8608A8A
8M x 8 Bit x 4 Banks
Features
•JEDEC
standard LVTTL 3.3V power supply
•MRS
Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4
banks operation
•All
inputs are sampled at the positive edge of
the system clock
•Burst
Read single write operation
•Auto
& Self refresh
•DQM
for masking
•8192
Refresh Cycles
•Package:54-pins
400 mil TSOP-Type II
Ordering Information.
Part No.
VDS8608A8A-75
VDS8608A8A-75A
Frequency
133Mhz-333
133Mhz-222
Interface
LVTTL
LVTTL
Package
400mil 54pin TSOPII
400mil 54pin TSOPII
Pin Assignment
V
CC
DQ0
V
CCQ
NC
DQ1
V
SSQ
NC
DQ2
V
CCQ
NC
DQ3
V
SSQ
NC
V
CC
NC
/WE
/CAS
/RAS
/CS
BS0
BS1
A10/AP
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
DQ7
Vss
Q
NC
DQ6
V
CCQ
NC
DQ5
V
SSQ
NC
DQ4
V
CCQ
NC
V
SS
NC
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
54-pin plastic TSOP II 400 mil
Rev 1.0 December, 2001
1