AP01L60T
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Fast Switching Characteristics
▼
Simple Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
12Ω
160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
±30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
150
Unit
℃/W
Data & specifications subject to change without notice
1
200810225
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
