AP01N40J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
100% Avalanche Rated
▼
Fast Switching Performance
▼
Simple Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
400V
16Ω
0.5A
Description
Advanced Power MOSFETs from APEC provide the designer with
the
best combination of fast switching, ruggedized device design, low
on-
resistance and cost-effectiveness.
The TO-251 package is
widely
preferred for commercial-industrial
through-hole applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
400
±20
0.5
0.4
2
17.4
0.14
2
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
0.5
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum
Thermal Resistance, Junction-case
Maximum
Thermal Resistance, Junction-ambient
Value
7.2
110
Units
℃/W
℃/W
201018072-1/4
Data & specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
