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AP02N60H 参数 Datasheet PDF下载

AP02N60H图片预览
型号: AP02N60H
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 63 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP02N60H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
Low Gate Charge
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
1.6A
Description
G D
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP02N60J) is available for low-profile
applications.
G
D S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
600
±30
1.6
1
6
39
0.31
64
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
110
Units
℃/W
℃/W
200705051-1/4
Data & specifications subject to change without notice