欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP02N60I_08 参数 Datasheet PDF下载

AP02N60I_08图片预览
型号: AP02N60I_08
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 114 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP02N60I_08的Datasheet PDF文件第2页浏览型号AP02N60I_08的Datasheet PDF文件第3页浏览型号AP02N60I_08的Datasheet PDF文件第4页浏览型号AP02N60I_08的Datasheet PDF文件第5页浏览型号AP02N60I_08的Datasheet PDF文件第6页浏览型号AP02N60I_08的Datasheet PDF文件第7页  
AP02N60I
RoHS-compliant Product
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching
Simple Drive Requirement
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
2A
Description
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
GD
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
±
30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
5.7
62
Unit
℃/W
℃/W
1
200806054
Data & specifications subject to change without notice