AP02N60P
16
f=1.0MHz
1000
I
D
=2A
V
GS
, Gate to Source Voltage (V)
12
8
C (pF)
V
DS
=320V
V
DS
=400V
V
DS
=480V
C
iss
100
4
C
oss
C
rss
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Operation in this area
limited by R
DS(ON)
1ms
10ms
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
1
0.1
I
D
(A)
100ms
1s
DC
T
c
=25 C
Single Pulse
o
0.1
0.05
0.02
P
DM
0.1
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1
10
100
1000
10000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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