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AP02N70EI-HF 参数 Datasheet PDF下载

AP02N70EI-HF图片预览
型号: AP02N70EI-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 56 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP02N70EI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
100% Avalanche Test
ESD Improved Capability
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
700V
1.6A
S
Description
AP02N70 from APEC provide the designer with the best
combination of fast switching , low on-resistance and cost-
effectiveness .
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
700
+20
1.6
1
6.4
27.8
13
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
℃/W
℃/W
1
201301041
Data & specifications subject to change without notice