AP02N90H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristics
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
900V
7.2Ω
1.9A
Description
S
G D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for low-
profile applications.
S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
900
±30
1.9
1.2
6
62.5
0.5
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200418063-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
