AP03N40I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=1A
VGS=0V, ID=250uA
400
-
-
-
-
3.3
4
V
Ω
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=1.8A
VDS=400V, VGS=0V
VGS=+20V, VDS=0V
ID=1.8A
-
-
-
-
-
-
-
-
-
-
-
-
-
2.6
-
-
S
IDSS
IGSS
Qg
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
25
-
+100
8.2
1.8
3.7
10
10
25
11
13
-
Qgs
Qgd
td(on)
tr
VDS=320V
VGS=10V
-
VDD=200V
-
ID=1.8A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=50Ω,VGS=10V
RD=111Ω
-
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
290 460
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
32
-
-
f=1.0MHz
5.5
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1A, VGS=0V
IS=1.8A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.5
V
180
870
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
