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AP03N70HJ 参数 Datasheet PDF下载

AP03N70HJ图片预览
型号: AP03N70HJ
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 106 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP03N70H/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Speed
Simple Drive Requirement
RoHS Compliant
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
3.6Ω
3.3A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP03N70J) is available for low-profile
applications.
G
D
S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
600
+30
3.3
2.1
13.2
54.3
0.44
85
3.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2.3
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200807093