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AP04N60H-HF 参数 Datasheet PDF下载

AP04N60H-HF图片预览
型号: AP04N60H-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 56 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP04N60H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
2.5Ω
4A
Description
AP04N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. It provide
high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching
design and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
4
2.2
15
59.5
8
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
2.1
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201205151