AP04N70BI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
0.6
-
-
-
V
V/℃
Ω
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
-
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=10V, ID=2A
2.4
VDS=VGS, ID=250uA
VDS=10V, ID=2A
VDS=600V, VGS=0V
VDS=480V,VGS=0V
VGS=±30V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-
4
V
gfs
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
Drain-Source Leakage Current (Tj=150oC)
-
100
IGSS
Qg
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
-
±100
ID=4A
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=4A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω,VGS=10V
RD=75Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage3
VD=VG=0V , VS=1.5V
-
-
-
-
-
-
4
ISM
VSD
15
1.5
Tj=25℃, IS=4A, VGS=0V
Notes:
1.Pulse width limited by max. junction temperature
2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/6
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
