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AP0503GMA 参数 Datasheet PDF下载

AP0503GMA图片预览
型号: AP0503GMA
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 61 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP0503GMA
Pb Free Plating Product
Advanced Power
Electronics Corp.
SO-8 similar area footprint and pin assignment
Low Gate Drive Voltage
Lower On-resistance
RoHS Compliant
G
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
4.2mΩ
75A
Description
S
D
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
S
S
S G
APAK-5
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
4
Rating
30
±12
75
56
300
70
0.6
29
24
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Value
Max.
Max.
1.8
85
Units
℃/W
℃/W
Data & specifications subject to change without notice
200429052-1/4