AP05FN50I
8
5
T
C
=25 C
o
I
D
, Drain Current (A)
6
I
D
, Drain Current (A)
10V
8.0V
7.0V
6.0V
V
G
=5.0V
T
C
=150
o
C
4
10V
7 .0V
5 .0 V
V
G
= 4.0V
3
4
2
2
1
0
0
4
8
12
16
20
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=2.7A
V
G
=10V
1.1
Normalized R
DS(ON)
Normalized BV
DSS
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
T
j
= 150
o
C
T
j
= 25 C
o
Normalized V
GS(th)
1
I
S
(A)
6
4
0.5
2
0
0
0.4
0.8
1.2
1.6
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
