AP0903GH-HF
160
120
80
40
0
100
80
60
40
20
0
T C =25 o C
T C =150 o C
10V
7.0 V
6.0V
10V
7 .0V
6.0V
5.0 V
5.0 V
V G =4.0V
V
G = 4.0 V
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
14
12
10
8
2.0
1.6
1.2
0.8
0.4
I D =20A
I D =30A
C =25 o C
V
G =10V
T
Ω
6
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
20
16
12
8
T j =25 o C
T j =150 o C
4
0
0
0.4
0.8
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
