AP0903GMA
f=1.0MHz
12
10000
I
D
=33A
V
GS
, Gate to Source Voltage (V)
9
V
DS
=16V
V
DS
=20V
V
DS
=24V
C (pF)
1000
6
C
iss
3
C
oss
C
rss
0
0
5
10
15
20
25
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
0.1
0.1
0.05
100us
1ms
10
P
DM
0.02
t
T
Single Pulse
T
C
=25
o
C
Single Pulse
1
0.1
1
10
0.01
10ms
100ms
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
90
V
DS
=5V
o
o
V
G
T
j
=25 C
T
j
=150 C
I
D
, Drain Current (A)
Q
G
4.5V
Q
GS
Q
GD
60
30
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
