AP09N20BGP-HF
20
16
T
C
= 25
o
C
16
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.5V
T
C
=150 C
12
o
10V
7.0V
6.0V
5.0V
V
GS
=4.5V
12
8
8
4
4
0
0
8
16
24
32
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.8
2.4
1.4
I
D
=5A
V
GS
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2
1.2
1.6
1.2
1
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
8
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
6
Normalized V
GS(th)
(V)
I
S
(A)
1
4
T
j
=150
o
C
2
T
j
=25
o
C
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
