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AP09N50P-HF 参数 Datasheet PDF下载

AP09N50P-HF图片预览
型号: AP09N50P-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 4 页 / 100 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP09N50P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.75Ω
9A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 and package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-AC
converters and high current high speed switching circuits.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
2
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+30
9
5.6
36
89
18
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62
Units
℃/W
℃/W
1
200906041
Data and specifications subject to change without notice