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AP09N70R_09 参数 Datasheet PDF下载

AP09N70R_09图片预览
型号: AP09N70R_09
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 102 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP09N70R
RoHS-compliant Product
Advanced Power
Electronics Corp.
100% Avalanche Rated
Fast Switching
Simple Drive Requirement
G
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
0.75Ω
9A
G
S
S
Description
AP09N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.The TO-262 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,ruggedized
design and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
+30
9
5
40
156
2
Units
V
V
A
A
A
W
mJ
A
mJ
Total Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
305
9
9
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.8
62
Unit
℃/W
℃/W
1
200903052
Data & specifications subject to change without notice