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AP09T10GH-HF 参数 Datasheet PDF下载

AP09T10GH-HF图片预览
型号: AP09T10GH-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 59 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP09T10GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
Halogen Free & RoHS Compliant Product
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
300mΩ
4.4A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
100
+20
4.4
2.8
12
12.5
Units
V
V
A
A
A
W
W
Total Power Dissipation
Total Power Dissipation
3
2
-55 to 150
-55 to 150
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10
62.5
Units
℃/W
℃/W
1
201109061
Data and specifications subject to change without notice