AP09T10GK-HF
Preliminary
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Chage
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
100V
300mΩ
2.4A
Description
Advanced Power MOSFETs from APEC provide the designer with the
The Advanced Power MOSFETs from APEC provide the
best combination best combination ofruggedized device design, low on-
designer with the of fast switching, fast switching,
resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
S
D
SOT-223
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
100
+20
2.4
1.9
10
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Units
℃/W
1
20110824pre
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
