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AP1203GMA 参数 Datasheet PDF下载

AP1203GMA图片预览
型号: AP1203GMA
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 61 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP1203GMA
Pb Free Plating Product
Advanced Power
Electronics Corp.
SO-8 similar area footprint and pin assignment
Low Gate Charge
Fast Switching Speed
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
12mΩ
47A
D
Description
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
S
S
S
G
APAK-5
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
4
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
47
30
120
37
0.29
29
24
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Max.
Max.
Value
3.4
85
Units
℃/W
℃/W
Data and specifications subject to change without notice
200408053-1/4