AP1333GU
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Gate Drive
▼
Small Package Outline
▼
Fast Switching Characteristic
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
-20V
800mΩ
-550mA
SOT-323 G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, low on-
resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+12
-550
-440
-2.5
0.35
0.003
-55 to 150
-55 to 150
Unit
V
V
mA
mA
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
360
Unit
℃/W
1
201105094
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
