欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP13P15GJ 参数 Datasheet PDF下载

AP13P15GJ图片预览
型号: AP13P15GJ
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 4 页 / 75 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP13P15GJ的Datasheet PDF文件第2页浏览型号AP13P15GJ的Datasheet PDF文件第3页浏览型号AP13P15GJ的Datasheet PDF文件第4页  
AP13P15GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-150V
300mΩ
-13A
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as high efficiency switching DC/DC converters and
DC motor control. The through-hole version (AP13P15GJ) is available
for low-profile applications.
G
G
D S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-150
±20
-13
-8.2
52
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200810051-1/4