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AP13P15GP 参数 Datasheet PDF下载

AP13P15GP图片预览
型号: AP13P15GP
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 76 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP13P15GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-150V
300mΩ
-13A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP13P15GP) are available for low-profile applications.
G
D
GD
S
TO-263(S)
TO-220(P)
S
Rating
-150
±20
-13
-8.2
52
96
0.77
Units
V
V
A
A
A
W
W/℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200728051-1/4