AP15N03GP
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching
▼
RoHS Compliant
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
TO-220
30V
80mΩ
15A
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuit.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±
20
15
9
50
28
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-case
Rthj-amb
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.5
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
200722051-1/6
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
