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AP15T25H-HF 参数 Datasheet PDF下载

AP15T25H-HF图片预览
型号: AP15T25H-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 58 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP15T25H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristics
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
250V
320mΩ
8.7A
S
Description
AP15T25 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
3
Rating
250
+20
8.7
5.6
34
62.5
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
2
62.5
Unit
℃/W
℃/W
1
201311181
Data & specifications subject to change without notice