AP16N50W
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.4Ω
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+30
16
11
60
250
72
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
40
Units
℃/W
℃/W
1
201010266
Data and specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
