AP1801GU
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V gate drive
▼
Lower on-resistance
▼
Surface mount package
D
2021-8
S
S
S
D
D
G
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
70mΩ
-4A
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
The 2021-8 J-lead package provides good on-resistance performance
and space saving like SC-70-6.
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±12
-4
-3.3
20
1.6
0.013
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
78
Unit
℃/W
Data and specifications subject to change without notice
200111051
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
