AP18N20GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
200V
170mΩ
18A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
±20
18
9.5
60
34.7
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200805264
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
