AP18P10GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
TO-220CFM(I)
-100V
160mΩ
-12A
Description
Advanced Power MOSFETs from APEC provide the
designer
with the best combination of fast switching,
ruggedized device
design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is
widely
preferred for
commercial
-industrial
through hole applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
-100
±32
-12
-10
-48
31.25
0.25
40
-9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum
Thermal Resistance, Junction-case
Maximum
Thermal Resistance, Junction-ambient
Value
4.0
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
201022073-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
