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AP18P10GK-HF 参数 Datasheet PDF下载

AP18P10GK-HF图片预览
型号: AP18P10GK-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 92 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP18P10GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
SOT-223
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
D
G
-100V
160mΩ
-3.1A
D
I
D
Description
AP18P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
-100
+20
-3.1
-2.5
-10
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Unit
℃/W
1
201303111
Data and specifications subject to change without notice