AP18P10GS
f=1.0MHz
15
10000
1000
100
12
V DS = - 80 V
D = - 8 A
C iss
I
9
6
3
0
C oss
C rss
10
0
10
20
30
40
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
0.2
0.1
100us
1ms
0.1
0.05
PDM
1
t
0.02
T
10ms
T C =25 o
C
0.01
100ms
DC
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
VG
V DS = -5V
T j =25 o
C
T j =150 o
C
12.5
10
7.5
5
QG
-4.5V
QGD
QGS
2.5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
