AP18T10AGK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant Product
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
160mΩ
2.8A
S
D
S
D
SOT-223
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current , V
GS
@ 10V
Rating
100
+20
2.8
2.2
10
2.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Units
℃/W
Data and specifications subject to change without notice
1
201102232
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
