AP20G45EH/J
Advanced Power
Electronics Corp.
Description
G
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
CES
C
450V
130A
I
CP
E
* High Input Impedance
* High Pick Current Capability
* 4.5V Gate Drive
* Strobe Flash Applications
G
C
E
TO-252(H)
C
G
TO-251(J)
E
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
GEP
I
CP
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
450
±6
±8
130
20
-55 to 150
-55 to 150
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rthj-c
Parameter
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25℃)
Test Conditions
V
GE
=6V, V
CE
=0V
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=130A (Pulsed)
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
5
-
51
2
5.4
5.5
72
640
2.6
2095
145
35
-
Max.
10
10
8
1.2
-
-
-
-
-
-
-
-
-
-
6
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
us
pF
pF
pF
℃/W
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-Case
V
CE
=V
GE
, I
C
=250uA
I
C
=40A
V
CE
=300V
V
GE
=5V
V
CC
=200V
I
C
=40A
R
G
=25Ω
V
GE
=5V
V
GE
=0V
V
CE
=25V
f=1.0MHz
Data and specifications subject to change without notice
200124032
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
