AP20GT60I
RoHS-compliant Product
Advanced Power
Electronics Corp.
Features
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
CES
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat),typ.
=1.8V@I
C
=20A
▼
RoHS Compliant Product
I
C
G
C
E
TO-220CFM(I)
600V
20A
C
G
E
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25 C
I
C
@T
C
=100 C
I
CM
P
D
@T
C
=25 C
T
STG
T
J
o
o
o
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
1
Rating
600
+20
40
20
160
25
-55 to 150
150
Units
V
V
A
A
A
W
℃
℃
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Parameter
Value
5
65
Units
℃/W
℃/W
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
=0V
V
CE
=30V
f=1.0MHz
Test Conditions
V
GE
=+20V, V
CE
=0V
V
CE
=600V, V
GE
=0V
V
GE
=15V, I
C
=20A
V
GE
=15V, I
C
=35A
V
CE
=V
GE
, I
C
=250uA
I
C
=20A
V
CC
=480V
V
GE
=15V
V
CE
=480V,
I
c
=20A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
1.8
2
-
100
24
40
50
20
135
190
0.3
0.9
3400
75
50
Max.
+100
25
2.5
2.7
6
160
-
-
-
-
-
380
-
-
5440
-
-
Units
nA
uA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Data and specifications subject to change without notice
1
201105102
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
