AP20P02GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
2.5V Gate Drive Capability
▼
Fast Switching
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
52mΩ
-18A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20P02GJ) are available for low-profile applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 20
± 12
-18
-14
-50
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
201225023
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
