欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP2302N-HF 参数 Datasheet PDF下载

AP2302N-HF图片预览
型号: AP2302N-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 92 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP2302N-HF的Datasheet PDF文件第2页浏览型号AP2302N-HF的Datasheet PDF文件第3页浏览型号AP2302N-HF的Datasheet PDF文件第4页  
AP2302N-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Capable of 2.5V Gate Drive
Lower Gate Charge
Surface Mount Package
RoHS Compliant & Halogen-Free
SOT-23S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
20V
64mΩ
3.2A
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
3.2
2.6
10
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
125
Unit
℃/W
1
201112091
Data and specifications subject to change without notice