AP2305AN
40
36
T
A
=25
o
C
-5.0V
-I
D
, Drain Current (A)
30
32
T
A
=150
o
C
-5.0V
-4.0V
28
-I
D
, Drain Current (A)
-4.0V
24
65mΩ
-3.0V
20
20
-3.0V
16
12
10
V
G
= -2.0V
8
V
G
= -2.0V
4
0
0
1
2
3
4
5
6
7
8
9
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
1.8
I
D
= -1.0A
T
A
=25
o
C
R
DS(ON)
(m
Ω
)
200
1.6
I
D
= -3.0A
V
GS
= -4.5V
Normalized R
DS(ON)
0
2
4
6
8
10
12
1.4
1.2
100
1
0.8
0
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
100
10
1
1
-V
GS(th)
(V)
0.5
0
-50
T
j
=150 C
-I
S
(A)
o
T
j
=25 C
o
0.1
0.01
0
0.4
0.8
1.2
1.6
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
