AP2306AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V gate drive
▼
Lower on-resistance
▼
Surface mount package
▼
RoHS Compliant
S
SOT-23
G
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
D
30V
35mΩ
5A
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current , V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
30
+8
5
4
20
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient
3
Value
90
Unit
℃/W
Data and specifications subject to change without notice
1
200810141
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
