AP2306CGN-HF
20
20
T
A
=25 C
16
o
I
D
, Drain Current (A)
12
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
T
A
=150 C
16
o
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
12
8
8
4
4
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
1.8
I
D
=5A
30
I
D
=5A
1.6
Normalized R
DS(ON)
T
A
=25 C
R
DS(ON)
(m
Ω
)
28
o
V
G
=4.5V
1.4
26
1.2
24
1.0
22
0.8
20
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
1.4
Normalized V
GS(th)
(V)
6
1.2
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
