AP2304GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small package outline
▼
Surface mount package
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
117mΩ
2.7A
Description
SOT-23
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
±20
2.7
2.2
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
90
Unit
℃/W
Data and specifications subject to change without notice
200420043
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
