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AP2305AGN 参数 Datasheet PDF下载

AP2305AGN图片预览
型号: AP2305AGN
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 4 页 / 74 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP2305AGN
Pb Free Plating Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
80mΩ
- 3.2A
Description
SOT-23
G
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Rating
- 30
± 12
-3.2
-2.6
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200731031