AP2307N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-16
-
-0.01
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3.0A
-
-
V/℃
mΩ
RDS(ON)
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70
90
mΩ
mΩ
V
VGS=-1.8V, ID=-2.0A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4A
VDS=-16V, VGS=0V
VDS=-12V, VGS=0V
VGS=±8V
-
-1.0
gfs
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
12
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-1
j
Drain-Source Leakage Current (T=70oC)
-
-25
j
IGSS
Qg
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
ID=-4A
15
1.3
4
24
-
Qgs
Qgd
td(on)
tr
VDS=-12V
VGS=-4.5V
-
VDS=-10V
8
-
ID=-1A
11
54
36
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=10Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
985 1580
VDS=-15V
180
160
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-1.2A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
39
26
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
