AP2316GN-HF
12
12
T
A
=25 C
I
D
, Drain Current (A)
o
8
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
= 150 C
o
10 V
7.0 V
5.0 V
4.5 V
8
V
G
= 3.0 V
4
4
V
G
= 3.0 V
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
65
1.8
I
D
=2A
T
A
=25
o
C
55
1.5
I
D
=4A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
45
1.2
35
0.9
25
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
4.0
T
j
=150 C
2.0
o
T
j
=25 C
o
Normalized V
GS(th)
(V)
1.2
3.0
1.4
I
S
(A)
1.0
1.0
0.6
0.0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
