AP2322GN
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Capable of 1.8V gate drive
▼
Simple Drive Requirement
▼
Surface mount package
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
90mΩ
2.5A
Description
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±8
2.5
2.0
10
0.833
0.006
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
150
Unit
℃/W
Data and specifications subject to change without notice
1
200801112
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
