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AP2330GN-HF 参数 Datasheet PDF下载

AP2330GN-HF图片预览
型号: AP2330GN-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 4 页 / 98 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP2330GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
90V
240mΩ
1.7A
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
D
S
SOT-23
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
90
+20
1.7
1.3
6
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
200912082
Data and specifications subject to change without notice