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AP2332GEN-HF 参数 Datasheet PDF下载

AP2332GEN-HF图片预览
型号: AP2332GEN-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 56 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP2332GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Halogen Free & RoHS Compliant Product
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
600V
72Ω
51mA
D
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The special design SOT-23 package with good thermal performance
is widely preferred for all commercial-industrial surface mount
applications using infrared reflow technique and suited for voltage
conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
4
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+32
51
41
68
300
0.5
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
mA
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
250
Unit
℃/W
1
201212131
Data and specifications subject to change without notice