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AP2426GEY-HF 参数 Datasheet PDF下载

AP2426GEY-HF图片预览
型号: AP2426GEY-HF
PDF下载: 下载PDF文件 查看货源
内容描述: 能够2.5V栅极驱动,低导通电阻 [Capable of 2.5V Gate Drive, Lower on-resistance]
分类和应用: 栅极栅极驱动
文件页数/大小: 4 页 / 105 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP2426GEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Capable of 2.5V Gate Drive
Lower on-resistance
Surface Mount Package
RoHS Compliant & Halogen-Free
2928-8
D1/D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
G2
S2
G1
S1
20V
26.5mΩ
6A
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good
performance and space saving like TSOP-6.
on-resistance
G1
D1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+10
6
4.8
36
1.39
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201201202
Data and specifications subject to change without notice