AP2530GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Low On-resistance
▼
Surface Mount Package
▼
RoHS Compliant
SOT-26
S2
G1
S1
D1
G2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
30
±20
3.3
2.6
10
1.14
0.01
-55 to 150
-55 to 150
P-channel
-30
±20
-2.3
-1.8
-10
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
110
Unit
℃/W
Data and specifications subject to change without notice
200425051-1/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
